1gate 2drain 3source to220 features low on-state resistance fast switching. khp45n03 absolute maximum ratings ta = 25 parameter symbol rating unit drain-source voltage v ds 30 gate-source voltage v gs 15 drain current (dc) i d 45 a power dissipation p d 86 w thermal resistance from junction to mounting base r th(j-mb) 1.75 k/w thermal resistance from junction to ambient r th(j-a) 60 k/w operating junction and storage temperature range t j, t stg -55to175 v lt s m d ty p e i c s m d ty p e t r a n s i s t o r s smd t ype smd type ic dip type smd type ic dip type product specification 4008-318-123 sales@twtysemi.com 1of 2 http://www.twtysemi.com
smd type dip type electrical characteristics tj= 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage v dss v gs =0v,i d =0.25ma 30 gate-threshold voltage v gs(th) v ds =v gs ,i d =1ma 1 1.5 2 gate-body leakage i gss v ds =0v,v gs = 5v 10 100 na zero gate voltage drain current i dss v ds =30v,v gs =0v 0.05 10 a v gs =5v,i d = 25 a 20 24 v gs =10v,i d = 25a 16 21 v ds =5v,i d =25a;t j =175 45 forward transconductance g fs v ds =25v;i d =25a 8 16 s total gate charge q gt 23 gate-source charge q gs 3 gate-drain charge q gd 12 input capacitance c iss 2000 2500 output capacitance c oss 380 450 reverse transfer capacitance c rss 250 300 turn-on delay time t d(on) 30 45 rise time t r 80 130 turn-off delay time t d(off) 95 135 fall-time t f 40 55 continuous source current (diode conduction) i s 45 a peak source (diode forward) current i sm t mb =25 ; pulsed; tp 10 s 180 a diode forward voltage v sd i s = 25a, v gs = 0 v 0.95 1.2 v *pulse test: pw 300 s duty cycle 2%.. nc ns v dd =15v, i d =25a, v gs =5v,r gen =5 v ds =25v,v gs =0v,f=1mhz pf v ds =24v,v gs =5v,i d =40a v r ds(on) drain-source on-resistance * m mosfet khp45n03 lt s m d ty p e i c s m d ty p e t r a n s i s t o r s smd t ype smd type ic dip type smd type ic dip type product specification 4008-318-123 sales@twtysemi.com 2of 2 http://www.twtysemi.com
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